Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2016
ISSN: 0038-1101
DOI: 10.1016/j.sse.2016.03.010